Improving AlN crystal quality and strain management on nano-patterned sapphire substrates by high temperature annealing for UVC-LEDs

Artikel › Journalartikel › 2020

Zitation

Hagedorn, S.; Walde, S.; Susilo, N.; Netzel, C.; Tillner, N.; Unger, R.-S.; Manley, P.; Ziffer, E.; Wernicke, T.; Becker, Christiane; Lugauer, H.-J.; Kneissl, M.; Weyers, M.: Improving AlN crystal quality and strain management on nano-patterned sapphire substrates by high temperature annealing for UVC-LEDs. In: physica status solidi a , 217. (2020), S. 1900796 (1-7).

ISSN

1862-6319

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