Investigation of Deep Dry Etching of 4H SIC Material for MEMS Applications Using DOE Modelling

Konferenzbeitrag › Konferenzpaper › 2021

Zitation

Erbacher, K.; Mackowiak, P.; Schiffer, M.; Lang, K.-D.; Schneider-Ramelow, M.; Ngo, H.-D.: Investigation of Deep Dry Etching of 4H SIC Material for MEMS Applications Using DOE Modelling. In: 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), 2021. o. O.: IEEE 2021, S. 634-637.

ISSN

2160-1968

ISBN

978-1-6654-1912-3

Link

https://doi.org/10.1109/MEMS51782.2021.9375268

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