Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si
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Stegemann, Bert; Lussky, Thomas; Gorka, Benjamin; Schoepke, Andreas; Schmidt, Manfred: Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si. In: Proceedings, 21th Workshop on Quantum Solar Energy Conversion (QUANTSOL). Hg. von T. Königstein et al.. Rauris: 2009, S. 2 Seiten.
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Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si
21th Workshop on Quantum Solar Energy Conversion (QUANTSOL)
Rauris, Austria, 08.03.2009Veranstaltungsbeitrag › Vortrag › 2009