Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States
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Stegemann, B.; Korte, L.; Gref, O.; Lussky, T.; Schmidt, M.; Angermann, H.: Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States. . München: W.I.P. 2011, S. 1615 - 1619.
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Low-temperature preparation of SiO2 tunnel oxides on c-Si with chemically abrupt interfaces and low densities of defect states
26th European Photovoltaic Solar Energy Conference (26th EU PVSEC)
Hamburg, 05.09.2011Veranstaltungsbeitrag › Posterpräsentation › 2011