Improved Si/SiO x interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Artikel › Journalartikel › 2015

Zitation

Gad, Karim M.; Vössing, Daniel; Balamou, Patrice; Hiller, Daniel; Stegemann, Bert; Angermann, Heike; Kasemann, Martin: Improved Si/SiO x interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation. In: Applied Surface Science Volume 353, 30.10.2015. (2015), S. 1269-1276.

ISSN

0169-4332

Link

http://www.sciencedirect.com/science/article/pii/S016943321501627X

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