Reduction of the interface defect density on crystalline silicon solar cell substrates by wet-chemical preparation of ultrathin SiOx passivation layers

Konferenzbeitrag › Konferenzpaper › 2015

Zitation

Balamou, Patrice; Angermann, Heike; Stegemann, Bert: Reduction of the interface defect density on crystalline silicon solar cell substrates by wet-chemical preparation of ultrathin SiOx passivation layers. In: Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd. New Orleans, LA, USA : IEEE 2015, S. 1-6.

ISBN

978-0-8137-2513-0

Link

http://dx.doi.org/10.1109/PVSC.2015.7356400

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