Passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)

Veranstaltungsbeitrag › Vortrag › 2008

Veranstaltung

Spring-Meeting of European Materials Research Society (EMRS08)
Strasbourg, France, 26.05.2008 - 30.05.2008

Ergänzende Angaben

Vortrag (B. Stegemann, A. Schoepke, D. Sixtensson, M. Schmidt)